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| (R) STPS3L60-C2 POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 3A 60 V 150C 0.61 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD, this device is intended for use in low voltage, high frequency inverters and small battery chargers. For applications where there are space constraints, e.g Telecom battery charger, this product is also offered in DO-15 (STPS3L60Q). DO-201AD STPS3L60-C2 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 105C = 0.5 tp = 10 ms Sinusoidal tp = 1s Tj = 25C Value 60 10 3 100 2000 - 65 to + 150 150 10000 Unit V A A A W C C V/s *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) July 2003 - Ed: 2A 1/4 STPS3L60-C2 THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads Parameter Lead length = 10 mm Lead length = 10 mm Value 80 20 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 100C Tj = 25C Tj = 100C Pulse test : * tp = 380 s, < 2% Min. Typ. VR = VRRM IF = 3 A IF = 3 A Max. 150 15 0.62 0.61 Unit A mA V To evaluate the maximum conduction losses use the following equation: P = 0.44 x IF(AV) + 0.05 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 2.5 2.0 1.5 1.0 T Fig. 2: Average forward current versus ambient temperature ( = 0.5). IF(av)(A) = 0.05 = 0.1 = 0.2 = 0.5 3.5 Rth(j-a)=Rth(j-l) 3.0 =1 2.5 2.0 1.5 1.0 0.5 tp Rth(j-a)=80C/W T 0.5 IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 =tp/T 0.0 =tp/T tp Tamb(C) 50 75 100 125 150 3.0 3.5 4.0 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/4 STPS3L60-C2 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration. IM(A) 12 10 8 6 4 Ta=100C Ta=25C Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 = 0.5 0.5 0.4 0.3 = 0.2 0.2 = 0.1 0.1 0.0 1E-1 Ta=50C T 2 IM t 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E+1 =tp/T tp 1E+0 1E+2 1E+3 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 5E+1 1E+1 1E+0 Tj=125C Tj=100C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 200 100 F=1MHz Tj=25C 1E-1 1E-2 1E-3 Tj=25C 50 20 VR(V) 0 5 10 15 20 25 30 35 40 45 50 55 60 10 1 VR(V) 10 100 Fig. 9-1: Forward voltage drop versus forward current (high level, maximum values). IFM(A) 30 Tj=100C (Maximum values) Tj=25C Fig. 9-2: Forward voltage drop versus forward current (low level, maximum values). IFM(A) 5 Tj=100C (Typical values) 4 Tj=100C (Maximum values) 10 Tj=100C (Typical values) 3 Tj=25C 2 1 VFM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 0.1 0.2 0.3 0.4 VFM(V) 0.5 0.6 0.7 0.8 0.9 1.0 3/4 STPS3L60-C2 PACKAGE MECHANICAL DATA DO-201AD plastic DIMENSIONS REF. E J A E C R0.5 R0.5 MAX Millimeters Min. Typ. Max. 9.5 13.75 17.75 5.3 1.3 3.53 2.4 3.15 3.9 1.6 14.9 15.6 0.5 0.6 0.7 18.78 3.8 4.8 Inches Min. Typ. Max. 0.374 0.541 0.699 0.208 0.051 0.139 0.094 0.124 0.153 0.063 0.587 0.614 0.019 0.024 0.027 0.739 0.150 0.189 K F D MIN B I 55.9 50.8 10 max G = D + 0.2 to 0.4 mm (G = hole in the PCB) H A B C D E F G H I J K Ordering type STPS3L60-C2 s Marking STPS3L60 Package DO-201AD Weight 1.12g Base qty 500 Delivery mode Ammopack s WHITE BAND INDICATES CATHODE EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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